12214 tkim tc-00003086/n0508 msim tc-00001683/13106da msim tb-00001810 no.a0188-1/4 http://onsemi.com semiconductor components industries, llc, 2013 january, 2014 2sb817c bipolar transistor ? 140v, ? 12a, low v ce ( sat ) pnp to-3p-3l stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? large current capacitance ? wide soa and high durability against breakdown ? adoption of mbit process speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector to base voltage v cbo -160 v collector to emitter voltage v ceo -140 v emitter to base voltage v ebo -- 6 v collector current i c --12 a collector current (pulse) i cp --20 a collector dissipation p c 2.5 w tc=25c 120 w junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7539-001 ordering number : ena0188b product & package information ? package : to-3p-3l ? jeita, jedec : sc-65, to-247, sot-199 ? minimum packing quantity : 30 pcs./tube marking electrical connection 1 : base 2 : collector 3 : emitter to-3p-3l 15.6 1.5 0.6 2.0 1.0 123 18.4 10.0 16.76 5.45 5.45 3.2 7.0 3.5 5.0 19.9 20.0 3.0 4.8 13.6 1.4 2SB817C-1E b817c lot no. 2 3 1
2sb817c no.a0188-2/4 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =--160v, i e =0a --0.1 ma emitter cutoff current i ebo v eb =--4v, i c =0a --0.1 ma dc current gain h fe 1v ce =--5v, i c =--1a 100 200 h fe 2v ce =--5v, i c =--5a 35 gain-bandwidth product f t v ce =--5v, i c =--1a 10 mhz output capacitance cob v cb =--10v, f=1mhz 280 pf base to emitter voltage v be v ce =--5v, i c =--5a --1.5 v collector to emitter saturation voltage v ce (sat) i c =--5a, i b =--0.5a --0.3 --2.0 v collector to base breakdown voltage v (br)cbo i c =-- 5 ma, i e =0a --160 v collector to emitter breakdown voltage v (br)ceo i c =--50ma, r be = --140 v emitter to base breakdown voltage v (br)ebo i e =--5ma, i c =0a --6 v turn-on time t on see speci ed test circuit. 0.45 s storage time t stg 1.75 s fall time t f 0.25 s switching time test circuit ordering information device package shipping memo 2SB817C-1E to-3p-3l 30pcs./tube pb-free v r r b v cc = --50v v be =5v ++ 50 7 input output r l = 10 7 100 m f 470 m f pw=20 m s i b1 d.c. ? b 1% i b2 i c = --10i b1 =10i b2 = --5a i c -- v be base to emitter voltage, v be -- v collector current, i c -- a 0 -- 0 . 5 -- 1 . 0 -- 1 . 5 it03412 0 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 v ce = --5v ta=120c 25c --40c i c -- v ce collector to emitter voltage, v ce -- v collector current, i c -- a it03410 0 -- 2 -- 4 -- 6 -- 8 -- 1 0 -- 1 2 -- 1 4 -- 1 6 0 --1 --2 --3 -- 4 --5 --6 --7 --8 --9 --10 --500ma --400ma --300ma --200ma --100ma --40ma --20ma i b =0ma
2sb817c no.a0188-3/4 1.0 10 23 57 100 23 57 23 --0.01 2 -- 1 0 2 3 5 -- 1 . 0 2 3 5 7 -- 0 . 1 2 3 5 7 3 5 7 i cp =--20a 10ms 100ms dc operation 1ms i c =--12a it17372 p c =120w --0.01 --0.1 23 57 -- 1 . 0 23 57 -- 1 0 23 5 7 --0.01 2 3 5 7 -- 0 . 1 2 3 5 7 -- 1 . 0 2 it03416 i c / i b =10 ta=120 o c --40 o c 0 0.5 1.0 1.5 2.0 2.5 3.0 20 060 40 80 100 140 120 160 it03419 25 o c --0.01 -- 0 . 1 23 57 -- 1 . 0 23 57 -- 1 0 23 57 10 2 3 5 7 100 2 3 it03414 25 o c --40 o c v ce = --5v ta=120 o c collector dissipation, p c -- w ambient temperature, ta -- o c p c -- ta s o a collector current, i c -- a collector to emitter voltage, v ce -- v v ce (sat) -- i c collector current, i c -- a collector to emitter saturation voltage, v ce (sat) -- v h fe -- i c collector current, i c -- a dc current gain, h fe single pulse tc=25 o c no heat sink collector dissipation, p c -- w case temperature, tc -- o c p c -- tc 0 140 100 120 60 80 40 20 20 060 40 80 100 140 120 160 it10416
2sb817c ps no.a0188-4/4 on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner. mass (g) unit 1.8 * for reference mm outline drawing 2SB817C-1E
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